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TC58NVG1S3HBAI4 Real Image TC58NVG1S3HBAI4 real image15004
Same model may have multiple batches, images only for reference.
TC58NVG1S3HBAI4 Real Image TC58NVG1S3HBAI4 real image15004
TC58NVG1S3HBAI4 Real Image TC58NVG1S3HBAI4 real image15004
Same model may have multiple batches, images only for reference.

TC58NVG1S3HBAI4

Part No TC58NVG1S3HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description IC EEPROM 2GBIT 25NS 63FBGA / NAND Flash Parallel 3.3V 2G-bit 256M x 8 63-Pin TFBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits (ICs)
Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM - NAND
Memory Size 2Gb (256M x 8)
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Memory Interface Parallel
Operating Supply Voltage 2.7 V ~ 3.6 V
Operating Temperature Range -40°C ~ 85°C (TA)
Mounting SMD
Package 63-VFBGA
Manufacturer Package 63-TFBGA (9x11)
Win Source Part Number 796445-TC58NVG1S3HBAI4
Popularity Medium
Supply and Demand Status Limited
Family Name TC58NVG1S3HBAI4
ECCN 3A991.b.1.a
Country of Origin Japan
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian TC58NVG1S3HBAI4 CAD Model

Description

The TC58NVG1S3HBAI4 is a 2Gb (256M x 8) EEPROM-NAND memory from Toshiba Semiconductor and Storage.

  • Memory Size: 2Gb (256M x 8)
  • Memory Type: EEPROM-NAND
  • Access Time: 25ns
  • Operating Supply Voltage: 2.7V to 3.6V
  • Interface: Parallel Memory
  • Package: 63-VFBGA
  • Operating Temperature Range: -40°C to 85°C (TA)
  • Halogen-Free Compliant: Yes
  • Estimated EOL Date: 2027

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