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Same model may have multiple batches, images only for reference.
TC58NYG1S3HBAI6 Real Image
Same model may have multiple batches, images only for reference.

TC58NYG1S3HBAI6

Part No TC58NYG1S3HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description IC FLASH 2G PARALLEL 67VFBGA / NAND Flash Memory(SLC Middle Capacity)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gb (256M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 1.7V ~ 1.95V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Manufacturer Pack Quantity 338
MSL Level 3 (168 Hours)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813178-TC58NYG1S3HBAI6
Ultra Librarian 3D Model Ultra Librarian TC58NYG1S3HBAI6 CAD Model

Description

The Toshiba Semiconductor and Storage TC58NYG1S3HBAI6 is a 2Gb (256M x 8) FLASH - NAND (SLC) memory product from Toshiba Semiconductor and Storage.

  • Access Time: 25ns
  • Package/Case: 67-VFBGA (6.5x8)
  • Mounting: SMD
  • Operating Temperature Range: -40°C to 85°C
  • Write Cycle Time - Word, Page: 25ns
  • Memory Interface: Parallel
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 338
  • MSL Level: 3 (168 Hours)
  • Supply Voltage: 1.7V ~ 1.95V

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103+ $3.3767 $347.8001
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