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Same model may have multiple batches, images only for reference.
TC58NYG2S0HBAI4 Real Image
Same model may have multiple batches, images only for reference.

TC58NYG2S0HBAI4

Part No TC58NYG2S0HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Description 4GB SLC NAND 24NM BGA 9X11 1.8V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Memory America, Inc.
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 4Gb (512M x 8)
Write Cycle Time - Word, Page 25ns
Supply Voltage (V) 1.7V ~ 1.95V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Manufacturer Pack Quantity 210
MSL Level 3 (168 Hours)
Win Source Part Number 720697-TC58NYG2S0HBAI4
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC58NYG2S0HBAI4 CAD Model

Description

The Toshiba Memory America TC58NYG2S0HBAI4 is a 4Gb (512M x 8) non-volatile FLASH - NAND (SLC) memory.

  • Package: 63-TFBGA (9x11)
  • Temperature Range: -40°C to 85°C
  • Write Cycle Time: 25ns

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