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TH58NVG5D2ETAKO

Part No TH58NVG5D2ETAKO
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits(ICs)
Family Memory
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 216924-TH58NVG5D2ETAKO
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TH58NVG5D2ETAKO CAD Model

Description

The TH58NVG5D2ETAKO is a NAND flash memory component manufactured by Toshiba (now Kioxia). It is a non-volatile memory device used in a variety of storage applications. The specific code suggests it's part of Toshiba/Kioxia's line of NAND flash memory products intended for integration into devices needing reliable and high-density storage.

Applications

  • Solid-State Drives (SSDs): Utilized in SSDs for laptops, desktops, and servers.
  • USB Flash Drives: Found in USB drives for portable data storage.
  • Memory Cards: Used in SD cards, microSD cards, and other formats.
  • Embedded Systems: Integrated into embedded devices requiring non-volatile storage.
  • Mobile Devices: Used in smartphones and tablets for internal storage.

Features

  • NAND Flash Technology: Uses NAND flash memory for storing data.
  • Non-Volatile Storage: Retains data even without power.
  • High Storage Density: Offers high capacity in a compact form factor.
  • Error Correction Code (ECC): Includes ECC to ensure data integrity.
  • Serial Interface: Uses a serial interface for efficient data transfer.
  • Low Power Consumption: Designed to minimize power usage.

Benefits

  • Reliable Data Storage: ECC mechanisms prevent data corruption.
  • Fast Data Access: Provides quick read and write speeds.
  • Compact Size: The small form factor enables integration into various devices.
  • Energy Efficient: Low power consumption improves battery life.
  • Wide Compatibility: Compatible with many host devices.

Additional Details

The TH58NVG5D2ETAKO typically operates at a specific voltage (e.g., 1.8V or 3.3V), and the package is often a BGA (Ball Grid Array) for surface mounting. It is crucial to refer to the official Kioxia datasheet for detailed specifications, including capacity, voltage, interface speed, endurance (P/E cycles), and operating temperature ranges.

The endurance of NAND flash memory is specified in program/erase (P/E) cycles. This indicates the number of times the memory can be written to and erased before its reliability degrades. Selecting the appropriate memory component based on application requirements is essential.

Kioxia (formerly Toshiba Memory) continues to develop advanced NAND flash memory solutions, and the TH58NVG5D2ETAKO is a key component in meeting the demand for high-performance, reliable, and energy-efficient storage across diverse industries.

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