The TH58NVG6H2HTAK0 is a 32GB NAND Flash memory chip manufactured by Toshiba Semiconductor and Storage. It utilizes a single-level cell (SLC) architecture which provides high endurance and fast read/write speeds compared to multi-level cell (MLC) or triple-level cell (TLC) NAND flash. This makes it ideal for applications requiring reliable and high-performance storage.

Applications

• Industrial embedded systems
• Solid-state drives (SSDs) for rugged environments
• High-performance data loggers
• Medical devices
• Aerospace applications

Features

• 32GB storage capacity
• Single-level cell (SLC) NAND flash
• High endurance and reliability
• Fast read/write speeds
• Operating voltage: 3.3V

Benefits

• Increased data reliability and longevity
• Improved system performance due to faster data access
• Extended product lifespan in demanding environments
• Reduced risk of data loss or corruption
• Suitable for applications requiring high data integrity

Additional Details

The TH58NVG6H2HTAK0 operates at a voltage of 3.3V and is packaged in a standard TSOP (Thin Small Outline Package), allowing for easy integration into existing systems. The SLC NAND technology ensures a high number of program/erase cycles, typically in the range of 60,000 to 100,000 cycles, making it suitable for write-intensive applications. Its robust design and high reliability make it an excellent choice for critical data storage where data integrity and longevity are paramount. Detailed specifications include parameters such as read latency, write latency, and power consumption in different operating modes. The part is designed to meet industry standards for temperature and shock resistance, ensuring reliable operation in harsh environments.