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Same model may have multiple batches, images only for reference.
TIM5867-30UL
Same model may have multiple batches, images only for reference.

TIM5867-30UL

Part No TIM5867-30UL
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description MICROWAVE POWER GaAs FET 15V 18A 3-Pin 7-AA05A
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Continuous Drain Current (ID) 18 A
Element Configuration Single
Gate to Source Voltage (Vgs) -5 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -65 °C
Mount Screw
Number of Pins 3
Packaging Bulk
Radiation Hardening No
RoHS Non-Compliant
Win Source Part Number 1032534-TIM5867-30UL
Categories JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TIM5867-30UL CAD Model

Description

The Toshiba Semiconductor and Storage JFETs (Junction Field Effect) is a single element configuration.

  • Maximum Operating Temperature: 175 °C
  • Minimum Operating Temperature: -65 °C
  • Continuous Drain Current (ID): 18 A
  • Gate to Source Voltage (Vgs): -5 V
  • Packaging: Bulk
  • Mount: Screw
  • RoHS: Non-compliant
  • Radiation Hardening: No
  • Supply and Demand Status: Shortage
  • Popularity: Low

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