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TJ15S06M3L(T6L1,NQ

Part No TJ15S06M3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 15A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1770pF @ 10V
Maximum Gate-Source Voltage +10V, -20V
Power Dissipation (Max) 41W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 7.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107369-TJ15S06M3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TJ15S06M3L(T6L1,NQ CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-Channel polarity electronic component that is used for discrete semiconductor products.

  • Operating Temperature Range: 175°C (TJ)
  • Maximum Power Dissipation: 41W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Mounting: SMD (SMT) package
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 15A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Status: active component and has a medium popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7932 $58.7592
15+ $8.0353 $120.5295
23+ $7.7847 $179.0481
31+ $7.5329 $233.5199
40+ $7.2823 $291.2920
54+ $6.5292 $352.5768
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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