The TJ30S06M3L,LXHQ is a P-channel MOSFET transistor from Toshiba Semiconductor and Storage.

• Drain to Source Voltage (Vdss): 60V
• Power Dissipation: 68W (Tc)
• Device Type: Surface Mount
• Package: TO-252-3, DPak (2 Leads + Tab), SC-63
• Maximum Gate-Source Voltage (Vgs): +10V and -20V
• Drive Voltage (Max Rds On, Min Rds On): 6V and 10V
• Current-Continuous Drain (Id) @ 25°C: 30A (Ta)
• Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V