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TJ30S06M3L(T6L1,NQ

Part No TJ30S06M3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 30A DPAK  /  P-Channel 60 V 30A (Ta) 68W (Tc) Surface Mount DPAK+
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 21.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 3950 pF @ 10 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TJ30S06
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TJ30S06M3L(T6L1NQ,TJ30S06M3LT6L1NQ
Standard Package 2,000
Win Source Part Number 1014407-TJ30S06M3L(T6L1,NQ
Ultra Librarian 3D Model Ultra Librarian TJ30S06M3L(T6L1,NQ CAD Model

Description

The TJ30S06M3L(T6L1,NQ is a P-channel MOSFET designed for power switching applications and manufactured by Toshiba Semiconductor and Storage.

  • Drain-Source Voltage: 60V
  • Maximum Gate-Source Voltage: +10V, -20V
  • Maximum Continuous Drain Current: 30A (Ta)
  • Maximum Rds On: 21.8mOhm @ 15A, 10V
  • Maximum Power Dissipation: 68W (Tc)
  • Operating Temperature Range: 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8972 $58.7664
29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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