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TJ8S06M3L(T6L1,NQ)

Part No TJ8S06M3L(T6L1,NQ)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 10 V
Power Dissipation (Max) 27W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TJ8S06
Other Names TJ8S06M3L(T6L1NQ),TJ8S06M3LT6L1NQ
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277941-TJ8S06M3L(T6L1,NQ)
Ultra Librarian 3D Model Ultra Librarian TJ8S06M3L(T6L1,NQ) CAD Model

Description

The TJ8S06M3L(T6L1,NQ) is a P-channel MOSFET (Metal Oxide) electronic component manufactured by Toshiba Semiconductor and Storage.

  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain (Id): 8A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Power Dissipation (Max): 27W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
  • Temperature Range: 175°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8150 $52.9750
150+ $0.6687 $100.3050
235+ $0.6478 $152.2330
320+ $0.6269 $200.6080
415+ $0.6060 $251.4900
555+ $0.5433 $301.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,390 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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