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Same model may have multiple batches, images only for reference.
TJ90S04M3L,LQ
Same model may have multiple batches, images only for reference.

TJ90S04M3L,LQ

Part No TJ90S04M3L,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR DPA / P-Channel 40 V 90A (Ta) 180W (Tc) Surface Mount DPAK+
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 7700 pF @ 10 V
Power Dissipation (Max) 180W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351857-TJ90S04M3L,LQ
Ultra Librarian 3D Model Ultra Librarian TJ90S04M3L,LQ CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-Channel FET type with a maximum drain to source voltage of 40V and a power dissipation of 180W (Tc).

  • Channel Type: P-Channel FET
  • Drain to Source Voltage (Max): 40V
  • Power Dissipation: 180W (Tc)
  • Mounting Type: Surface Mount
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Vgs(max): +10V and -20V
  • Gate Charge (Qg): 172 nC @ 10V
  • Rds On (Max): 4.3mOhm @ 45A, 10V
  • Ideal for: Power Supplies, Motor Control, and Lighting

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