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TK100E06N1

Part No TK100E06N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 100A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 10500pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 2.3 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212850-TK100E06N1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100E06N1 CAD Model

Description

The Toshiba Semiconductor and Storage TK100E06N1 is an N-channel MOSFET transistor that can handle a maximum power dissipation of 255W (Tc) and a continuous drain current of 100A (Ta).

  • Maximum Power Dissipation: 255W (Tc)
  • Continuous Drain Current: 100A (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Package: TO-220
  • Mounting Type: Through Hole
  • Product Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Operating Temperature: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3081 $52.3240
95+ $1.0734 $101.9730
145+ $1.0398 $150.7710
200+ $1.0063 $201.2600
260+ $0.9727 $252.9020
345+ $0.8721 $300.8745
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,783 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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