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TK10E80W,S1X

Part No TK10E80W,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR TO-
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 300 V
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1099399-TK10E80W,S1X
Ultra Librarian 3D Model Ultra Librarian TK10E80W,S1X CAD Model

Description

The 1099399-TK10E80W,S1X is a high-voltage N-channel MOSFET designed for various electronic applications.

  • Series: DTMOSIV
  • Package: TO-220-3
  • Drain to Source Voltage (Vdss): 800 V
  • Continuous Drain Current (Id): 9.5A
  • Rds On (Max): 550mOhm @ 4.8A and 10V
  • Gate Charge (Qg): 19 nC @ 10V
  • Maximum Operating Temperature: 150°C
  • Commonly used in: Power supplies, motor control, and other high-voltage applications
  • Manufacturer: Toshiba Semiconductor and Storage

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