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Same model may have multiple batches, images only for reference.
TK10P60W,RVQ(S
Same model may have multiple batches, images only for reference.

TK10P60W,RVQ(S

Part No TK10P60W,RVQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package DPAK
Continuous Drain Current (ID) 9.7 A
Drain to Source Resistance 430 mΩ
Element Configuration Single
Fall Time 5.5 ns
Gate to Source Voltage (Vgs) 30 V
Height 2.3 mm
Input Capacitance 700 pF
Length 6.6 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 80 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Power Dissipation 80 W
Radiation Hardening No
Rise Time 22 ns
RoHS Compliant
Turn-Off Delay Time 75 ns
Turn-On Delay Time 45 ns
Width 7.18 mm
Win Source Part Number 963044-TK10P60W,RVQ(S
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK10P60W,RVQ(S CAD Model

Description

The TK10P60W,RVQ(S transistor from Toshiba Semiconductor and Storage is a high-quality MOSFET transistor that is designed for RF applications.

  • Mounting Type: Surface Mount
  • Package: DPAK
  • Power Dissipation: 80 W
  • Continuous Drain Current: 9.7 A
  • Rise Time: 22 ns
  • Fall Time: 5.5 ns
  • Gate to Source Voltage (Vgs): 30 V
  • Drain to Source Resistance: 430 mΩ
  • RoHS: Compliant
  • Maximum Operating Temperature: 150 °C
  • Category: Transistors - FETs, MOSFETs - RF
  • Popularity: Low

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170+ $0.6038 $102.6460
260+ $0.5834 $151.6840
370+ $0.5426 $200.7620
480+ $0.5222 $250.6560
600+ $0.5018 $301.0800
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