The Toshiba Semiconductor and Storage MOSFET transistor is a single N-Channel FET with a drain to source voltage of 100V and a continuous drain of 40A (Tc).

• Maximum Rds On: 10.6mOhm @ 20A, 10V
• Vgs(th): 2.5V @ 300µA
• Power Dissipation: 75W (Tc)
• Package: TO-252-3, DPak (2 Leads + Tab), SC-63
• Standard Package: 2,500 pieces
• Mounting Type: Surface Mount
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
• Temperature Range: -55°C to 175°C (TJ)
• REACH: Unaffected
• HTSUS Code: 8541.29.0095