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TK11A50D(STA4,Q,M)

Part No TK11A50D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 11A TO220SIS  /  N-Channel 500 V 11A (Ta) 45W (Tc) Through Hole TO-220SIS
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK11A50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK11A50D(STA4QM),TK11A50DSTA4QM
Standard Package 50
Win Source Part Number 1225126-TK11A50D(STA4,Q,M)
Ultra Librarian 3D Model Ultra Librarian TK11A50D(STA4,Q,M) CAD Model

Description

This electronic component is a N-Channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Series: π-MOSVII
  • Win Source Part Number: 1225126-TK11A50D(STA4,Q,M)
  • Package: TO-220-3 Full Pack
  • Quantity per Tube: 50
  • Maximum Drain to Source Voltage (Vdss): 500V
  • Maximum Continuous Drain Current (Id) @ 25°C: 11A (Ta)
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 600mOhm @ 5.5A, 10V
  • Maximum Gate-Source Voltage (Vgs(th)) @ Id: 4V @ 1mA
  • Maximum Power Dissipation (Max): 45W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Maximum Vgs: ±30V
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095
  • Other Names: TK11A50D(STA4QM) and TK11A50DSTA4QM

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