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TK12A50D(STA4,Q,M)

Part No TK12A50D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1350pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 45W (Tc)
Rds On (Maximum) @ Id, Vgs 520 mOhm @ 6A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 757419-TK12A50D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Limited
Family Name TK12A50D
Introduction Date September 10, 2008
Country of Origin China, Malaysia
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian TK12A50D(STA4,Q,M) CAD Model

Description

The TK12A50D(STA4,Q,M) is a MOSFET from Toshiba Semiconductor and Storage.

  • MOSFET Type: π-MOSVII
  • Channel Type: N
  • Drain-Source Voltage: 500V
  • Gate-Source Voltage (Maximum): ±30V
  • Current Rating: 12A (Ta)
  • Power Dissipation (Maximum): 45W (Tc)
  • Rds On (maximum) @ Id, Vgs: 520 mOhm @ 6A, 10V
  • Gate Charge (Qg) (maximum) @ Vgs: 25nC @ 10V
  • Mounting Style: Through-Hole
  • Package: TO-220-3 Full Pack
  • Operating Temperature: 150°C (TJ)

The W04G-E4/51 is a diode from Vishay Semiconductor Diodes Division.

  • Voltage - Peak Reverse (Maximum): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (maximum) at If: 1V @ 1A
  • Current - Reverse Leakage at Vr: 5μA @ 400V
  • Mounting Style: Through-Hole
  • Package: 4-Circular, WOG

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