The TK12A50D(STA4,Q,M) is a MOSFET from Toshiba Semiconductor and Storage.
- MOSFET Type: π-MOSVII
- Channel Type: N
- Drain-Source Voltage: 500V
- Gate-Source Voltage (Maximum): ±30V
- Current Rating: 12A (Ta)
- Power Dissipation (Maximum): 45W (Tc)
- Rds On (maximum) @ Id, Vgs: 520 mOhm @ 6A, 10V
- Gate Charge (Qg) (maximum) @ Vgs: 25nC @ 10V
- Mounting Style: Through-Hole
- Package: TO-220-3 Full Pack
- Operating Temperature: 150°C (TJ)
The W04G-E4/51 is a diode from Vishay Semiconductor Diodes Division.
- Voltage - Peak Reverse (Maximum): 400V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (maximum) at If: 1V @ 1A
- Current - Reverse Leakage at Vr: 5μA @ 400V
- Mounting Style: Through-Hole
- Package: 4-Circular, WOG