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TK12A50D

Part No TK12A50D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 092736-TK12A50D
Family Name TK12A50D
Introduction Date September 10, 2008
ECCN EAR99
Country of Origin China, Malaysia
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK12A50D CAD Model

Description

The TK12A50D is an N-Channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 45W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 12A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Mount Type: Through-hole
  • RoHS Compliant: Yes
  • Description: A popular choice among designers for applications in discrete semiconductor products.
  • Market Status: High popularity and sufficient supply.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3564 $54.2560
80+ $1.2705 $101.6400
125+ $1.2276 $153.4500
180+ $1.1417 $205.5060
230+ $1.0988 $252.7240
285+ $1.0559 $300.9315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,809 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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