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TK12E60W,S1VX

Part No TK12E60W,S1VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 11.5A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 600μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 890pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 5.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1050217-TK12E60W,S1VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK12E60W,S1VX CAD Model

Description

The TK12E60W,S1VX is a reliable MOSFET component that is manufactured by Toshiba Semiconductor and Storage.

  • Supplier: Win Source
  • Popularity: medium-popularity
  • Operating Temperature Range: 150°C (TJ)
  • Supply Voltage: 10V
  • Category: discrete semiconductor products
  • Status: active product
  • Manufacturer: Toshiba Semiconductor and Storage

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0672 $58.6960
135+ $0.8755 $118.1925
205+ $0.8489 $174.0245
285+ $0.8212 $234.0420
365+ $0.7935 $289.6275
490+ $0.7115 $348.6350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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