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Same model may have multiple batches, images only for reference.
TK14N65W,S1F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK14N65W,S1F

Part No TK14N65W,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.7A TO-220
Datasheet
TK14N65W,S1F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 690μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 6.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1050255-TK14N65W,S1F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK14N65W,S1F CAD Model

Description

The Toshiba Semiconductor and Storage TK14N65W,S1F is a through-hole mounting N-Channel MOSFET with a maximum power dissipation of 130W (Tc).

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 13.7A (Ta)
  • Maximum Gate-Source Voltage: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 495 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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