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Same model may have multiple batches, images only for reference.
TK16A55D Real Image
Same model may have multiple batches, images only for reference.

TK16A55D

Part No TK16A55D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 16A TO-220SIS
Datasheet
TK16A55D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 16A (Ta)
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2600pF @ 25V
Maximum Rds On at Id,Vgs 330 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 212867-TK16A55D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK16A55D CAD Model

Description

The Toshiba Semiconductor and Storage TK16A55D is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current: 16A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Input Capacitance: 2600pF @ 25V
  • Maximum Rds On @ Id,Vgs: 330 mOhm @ 8A, 10V
  • Package: TO-220SIS case
  • Operating Temperature: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7404 $59.2320
195+ $0.6075 $118.4625
295+ $0.5879 $173.4305
410+ $0.5694 $233.4540
525+ $0.5509 $289.2225
705+ $0.4932 $347.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,600 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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