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Same model may have multiple batches, images only for reference.
TK16G60W,RVQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK16G60W,RVQ

Part No TK16G60W,RVQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 15.8A D2PAK
Datasheet
TK16G60W,RVQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 790μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1350pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 142310-TK16G60W,RVQ
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK16G60W,RVQ CAD Model

Description

The TK16G60W,RVQ MOSFET from Toshiba Semiconductor and Storage is a high-quality MOSFET that is perfect for your electronic needs.

  • Popularity: medium
  • Supply and demand status: limited
  • Packaging: D2PAK
  • Maximum Power Dissipation: 130W (Tc)
  • Continuous Drain Current: 15.8A (Ta)
  • Gate-Source Threshold Voltage: 3.7V @ 790μA
  • Maximum Rds On @ Id,Vgs: 190 mOhm @ 7.9A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5611 $54.6385
80+ $1.2809 $102.4720
125+ $1.2409 $155.1125
170+ $1.2008 $204.1360
220+ $1.1608 $255.3760
290+ $1.0407 $301.8030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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