The TK16G60W5 is a 600V, 16A N-channel power MOSFET from Toshiba Semiconductor and Storage. It is specifically designed for high-efficiency and high-power density applications. This MOSFET utilizes Toshiba's DTMOS series process to achieve superior low on-resistance characteristics and fast switching speeds. The device is available in a surface-mount package.

Applications

• High-efficiency power supplies
• Power factor correction (PFC) circuits
• DC-DC converters for industrial applications
• Solar inverters
• Uninterruptible power supplies (UPS)

Features

• Low on-resistance: Minimizes conduction losses, improving overall efficiency.
• Fast switching speed: Reduces switching losses and allows for higher frequency operation.
• High avalanche capability: Provides robustness against voltage transients.
• Maximum Drain-Source Voltage (VDSS): 600V
• Continuous Drain Current (ID): 16A
• Gate Threshold Voltage (VGS(th)): 2.5V (Typical)
• Operating Temperature Range: -55°C to 150°C
• Surface-mount package: Facilitates automated assembly and compact designs.

Benefits

• High efficiency: Low on-resistance and fast switching minimize power losses, resulting in high efficiency.
• High power density: Compact surface-mount package allows for high power density designs.
• Increased system reliability: High avalanche capability provides robustness against voltage transients.
• Simplified thermal management: Low on-resistance reduces heat generation.
• Ease of assembly: Surface-mount package simplifies automated assembly processes.

Additional Details

The TK16G60W5 is a RoHS compliant device. It is designed for applications requiring both high efficiency and high power density. Consult the datasheet for detailed specifications, including static and dynamic characteristics, thermal resistance, and package dimensions. This MOSFET is well-suited for use in demanding industrial and commercial applications where efficiency and reliability are critical.