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TK16J60W,S1VQ(Q

Part No TK16J60W,S1VQ(Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1340+
Reference case TO-3P
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 757425-TK16J60W,S1VQ(Q
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK16J60W,S1VQ(Q CAD Model

Description

The Toshiba TK16J60W,S1VQ(Q is a 600V N-channel power MOSFET. It's designed for high-efficiency power switching applications. The device features a low on-resistance and fast switching speed, contributing to reduced power loss and improved system efficiency.

Applications:

  • Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
  • Motor Control: Implemented in motor control circuits to regulate and drive motors.
  • Inverters: Utilized in inverters for converting DC power to AC power.
  • Lighting: Found in electronic ballasts and LED lighting systems.
  • DC-DC Converters: Employed in DC-DC converters to step up or step down voltage levels.

Features:

  • N-Channel MOSFET: Enhances the switching speed and efficiency.
  • 600V Drain-Source Voltage: Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes power loss during switching.
  • Fast Switching Speed: Reduces switching losses and improves efficiency.
  • Avalanche Capability: Provides robustness against voltage spikes and surges.
  • RoHS Compliant: Meets environmental standards for hazardous substances.

Benefits:

  • High Efficiency: Low on-resistance and fast switching speed minimize power losses.
  • Reliable Performance: Robust design ensures stable operation in demanding applications.
  • Reduced Heat Dissipation: Lower power loss translates to less heat generation.
  • Simplified Design: Easy to integrate into various power electronic circuits.
  • Improved System Performance: Enhances the overall efficiency and reliability of the power system.

Additional Details:

The Toshiba TK16J60W,S1VQ(Q has a drain current (ID) rating of 16A. The gate-source voltage (VGS) is typically ±30V. It features a low gate charge, contributing to faster switching speeds. The device is typically packaged in a TO-220 or similar through-hole package. The operating temperature range is generally -55°C to +150°C. This MOSFET is designed to handle high-voltage and high-current switching tasks with minimal losses, making it a suitable choice for a wide range of power electronics applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.5227 $67.6135
11+ $11.0961 $122.0571
17+ $10.7496 $182.7432
23+ $10.4019 $239.2437
29+ $10.0554 $291.6066
39+ $9.0159 $351.6201
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,100 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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