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TK16N60W,S1VF(S

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Part No	TK16N60W,S1VF(S
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	Trans MOSFET N-CH Si 600V 15.8A 3-Pin(3+Tab) TO-247
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting	SMD (SMT)
Case / Package	TO-247
Continuous Drain Current (ID)	15.8 A
Gate to Source Voltage (Vgs)	30 V
Maximum Operating Temperature	150 °C
Min Operating Temperature	-55 °C
Mount	Through Hole
Number of Elements	1
Power Dissipation	130 W
RoHS	Non-Compliant
Win Source Part Number	1099422-TK16N60W,S1VF(S
Categories	Transistors - FETs, MOSFETs - RF
Manufacturer	Toshiba Semiconductor and Storage
Popularity	Low
Supply and Demand Status	Shortage
Ultra Librarian 3D Model	Ultra Librarian TK16N60W,S1VF(S CAD Model

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Description

The Toshiba Semiconductor and Storage 1099422-TK16N60W,S1VF(S is a power MOSFET designed for use in RF applications.

Mount: Surface mount device
Package: TO-247
Maximum Power Dissipation: 130 W
Continuous Drain Current: 15.8 A
Gate to Source Voltage: 30 V
Operating Temperature Range: Between -55 °C and 150 °C
RoHS Compliant: No
Supply and Demand: Shortage

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