The TK17A65U is a 650V, 17A N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for use in a wide range of power switching applications, particularly those that require a high breakdown voltage and efficient operation. This MOSFET uses Toshiba's advanced π-MOSVII process, which helps achieve a good balance between low on-resistance and fast switching speed. The package is through-hole.

Applications

• Switching power supplies
• Power factor correction (PFC)
• DC-DC converters
• Lighting applications
• Motor control circuits

Features

• High Drain-Source Voltage: 650V V<sub>DSS
• Continuous Drain Current: 17A I<sub>D
• Low on-resistance: Reduces conduction losses, enhancing efficiency.
• Fast switching speed: Minimizes switching losses, enabling higher frequency operation.
• High avalanche capability: Improves reliability by withstanding voltage spikes.
• Gate Threshold Voltage (VGS(th)): 2.5 - 3.5V (Typical)
• Operating Temperature Range: -55°C to 150°C

Benefits

• Enhanced System Efficiency: Low on-resistance contributes to minimal power dissipation, maximizing overall efficiency.
• Reduced Heat Dissipation: The device's characteristics reduce heat generation, simplifying thermal management.
• Increased Reliability: High avalanche capability provides protection against voltage transients and increases system robustness.
• Simplified Design: Easy to drive and control, facilitating straightforward integration into circuit designs.
• Wide Range of Applications: Suitable for diverse power switching applications due to its high voltage rating and efficiency.

Additional Details

The TK17A65U comes in a through-hole package. It complies with RoHS standards, ensuring environmental responsibility. For comprehensive specifications, including static and dynamic parameters, thermal resistance, and safe operating area, consult the datasheet. This device is suitable for applications requiring high reliability and efficiency in a through-hole format.