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TK20A60U(STA4,Q,M)

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Part No	TK20A60U(STA4,Q,M)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State
ECAD Module
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Mounting	SMD (SMT)
Case / Package	TO-220-3
Continuous Drain Current (ID)	20 A
Drain to Source Breakdown Voltage	600 V
Drain to Source Resistance	190 mΩ
Drain to Source Voltage (Vdss)	600 V
Fall Time	12 ns
Gate to Source Voltage (Vgs)	30 V
Input Capacitance	1.47 nF
Maximum Operating Temperature	150 °C
Max Power Dissipation	45 W
Min Operating Temperature	-55 °C
Mount	Through Hole
Number of Elements	1
Number of Pins	67
Power Dissipation	45 W
Radiation Hardening	No
Rds On Max	190 mΩ
Rise Time	40 ns
RoHS	Compliant
Turn-Off Delay Time	100 ns
Win Source Part Number	972406-TK20A60U(STA4,Q,M)
Categories	Transistors - FETs, MOSFETs - RF
Manufacturer	Toshiba Semiconductor and Storage
Popularity	Low
Supply and Demand Status	Shortage
Ultra Librarian 3D Model	Ultra Librarian TK20A60U(STA4,Q,M) CAD Model

Alternative Products

Description

The Toshiba TK20A60U(STA4,Q,M) is a MOSFET transistor with a drain to source voltage (Vdss) of 600V and a continuous drain current (ID) of 20A.

Drain to Source Voltage (Vdss): 600V
Continuous Drain Current (ID): 20A
Drain to Source Breakdown Voltage: 600V
Gate to Source Voltage (Vgs): 30V
Package: TO-220-3
Mounting: Through-Hole
Maximum Power Dissipation: 45W
Drain to Source Resistance: 190mΩ
Rise Time: 40ns
Fall Time: 12ns
RoHS Compliant: Yes
Maximum Operating Temperature: 150°C
Supply and Demand Status: Shortage

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