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Same model may have multiple batches, images only for reference.
TK20S04K3L(T6L1,NQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK20S04K3L(T6L1,NQ

Part No TK20S04K3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 20A DPAK-3
Datasheet
TK20S04K3L(T6L1,NQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 820pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 10A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107425-TK20S04K3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK20S04K3L(T6L1,NQ CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-quality electronic component that is designed to deliver optimal performance in various applications.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 20A (Ta)
  • Maximum Rds On: 14 mOhm @ 10A, 10V
  • Maximum Input Capacitance: 820pF @ 10V
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Power Dissipation: 38W (Tc)
  • Operating Temperature: Up to 175°C (TJ)
  • Package: DPAK+
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9385 $61.0025
150+ $0.7701 $115.5150
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6979 $289.6285
555+ $0.6257 $347.2635
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Availability: 1,422 pieces
MOQ: 65 pcs
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