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Same model may have multiple batches, images only for reference.
TK20V60W,LVQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK20V60W,LVQ

Part No TK20V60W,LVQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A 4DFN / N-Channel 600 V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad
Base Product Number TK20V60
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK20V60WLVQDKR,TK20V60WLVQCT,TK20V60WLVQTR,TK20V60W,LVQ(S
Standard Package 2,500
Win Source Part Number 1019255-TK20V60W,LVQ
Ultra Librarian 3D Model Ultra Librarian TK20V60W,LVQ CAD Model

Description

The TK20V60W,LVQ is a MOSFET (metal oxide semiconductor field-effect transistor) from Toshiba Semiconductor and Storage.

  • Series: DTMOSIV
  • Packaging: Tape and Reel
  • Standard Package Quantity: 2,500
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 20A (Ta)

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Availability: 2,341 pieces
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