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TK22A10N1

Part No TK22A10N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 52A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 300μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 11A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 212871-TK22A10N1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK22A10N1 CAD Model

Description

The Toshiba Semiconductor and Storage TK22A10N1 is a high-performance MOSFET transistor with an N-channel polarity.

  • GPTDescription: It has a maximum power dissipation of 30W (Tc) and a drain-source breakdown voltage of 100V.
  • GPTDescription: The device has a maximum gate-source voltage of ±20V, a maximum Rds On @ Id,Vgs of 13.8 mOhm @ 11A, 10V, and a gate-source threshold voltage of 4V @ 300μA.
  • GPTDescription: This product is supplied in a TO-220SIS package with a dimension of TO-220-3 Full Pack, Isolated Tab.
  • GPTDescription: It is currently in limited supply and has a medium popularity rating.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4204 $58.8560
335+ $0.3453 $115.6755
520+ $0.3350 $174.2000
715+ $0.3234 $231.2310
925+ $0.3130 $289.5250
1,235+ $0.2807 $346.6645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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