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TK25A60X,S5X(M

Part No TK25A60X,S5X(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220SIS Tube
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Win Source Part Number 1121183-TK25A60X,S5X(M
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK25A60X,S5X(M CAD Model

Description

The TK25A60X,S5X(M is a 600V, 25A N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds. It is commonly used in power supplies, motor control circuits, and inverter applications. The TK25A60X,S5X(M features excellent avalanche ruggedness and is available in a TO-220SIS package for easy mounting and heat dissipation.

Applications

  • Power supplies
  • Motor control circuits
  • Inverter circuits
  • DC-DC converters
  • AC-DC adapters

Features

  • Voltage rating of 600V
  • Continuous drain current of 25A
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Avalanche ruggedness

Benefits

  • High efficiency in switching applications
  • Reduced power losses due to low on-resistance
  • Improved system performance with fast switching speeds
  • Robustness against voltage transients
  • Simplified thermal management with TO-220SIS package

Additional Details

The TK25A60X,S5X(M features a typical on-resistance of 0.15 ohms. The gate threshold voltage is typically 3V. The MOSFET is designed for operation over a temperature range of -55°C to +150°C. It offers excellent gate charge characteristics for efficient switching. The device’s avalanche energy rating ensures it can withstand transient voltage spikes without damage. The TO-220SIS package provides good thermal conductivity, allowing for efficient heat dissipation. The MOSFET's robust design ensures long-term reliability in demanding applications. Its fast body diode recovery time minimizes switching losses. The device is designed for easy paralleling to increase current handling capability. The MOSFET's low gate charge reduces drive requirements, simplifying circuit design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4204 $50.8284
51+ $1.9860 $101.2860
78+ $1.9239 $150.0642
108+ $1.8619 $201.0852
139+ $1.7998 $250.1722
186+ $1.6136 $300.1296
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,720 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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