Toshiba Semiconductor and Storage's TK25E60X is a MOSFET technology-based electronic component that is a part of the DTMOSIV-H series.

• Package: TO-220-3
• Mounting: through a hole
• Operating temperature range: 150°C (TJ)
• Current-continuous drain (Id): 25A (Ta)
• Drive voltage (Max Rds On, Min Rds On): 10V
• Channel type: N
• Drain source voltage: 600V
• Gate charge (Qg) (Maximum) @ Vgs: 40nC @ 10V
• Input capacitance (Ciss) (Maximum) @ Vds: 2400pF @ 300V
• Power dissipation (Maximum): 180W (Tc)
• Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 7.5A, 10V
• Alternatives: STP30NM60N, SiHP120N60E-GE3, IPP60R125CPXK, and IPP60R125CPAKSA1