The TK28A65W is a 650V, 28A N-channel power MOSFET from Toshiba Semiconductor and Storage. It's designed with advanced trench MOSFET technology for superior performance in power switching applications.

Applications:

• Power supplies
• Adapters
• Lighting (LED)
• Motor control
• DC-DC converters

Features:

• VDSS: 650V
• ID: 28A
• RDS(on) (Max): 0.145 Ω @ VGS = 10V
• Low On-Resistance
• High-Speed Switching
• High Avalanche Ruggedness

Benefits:

• High Efficiency
• Reduced Power Loss
• Improved Thermal Performance
• High Reliability

Additional Details:

The TK28A65W comes in a TO-247 package. Its low on-resistance helps reduce conduction losses, contributing to high efficiency. Its fast switching capability minimizes switching losses. The high avalanche ruggedness provides robustness and reliability in demanding applications with transient voltages. Proper heatsinking is recommended to keep the device within its operating temperature range.

This MOSFET's design provides good performance in both hard-switching and soft-switching topologies. Its low gate charge contributes to efficient gate drive. The device is RoHS compliant. The maximum ratings must be observed to prevent device failure.