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TK290P60Y,RQ

Part No TK290P60Y,RQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11.5A DPAK / N-Channel 600 V 11.5A (Tc) 100W (Tc) Surface Mount DPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 300 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Supplier Device Package DPAK
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TK290P60
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number TK290P60YRQCT,TK290P60YRQTR,TK290P60YRQDKR,TK290P60YRQ(S,TK290P60Y,RQ(S
Standard Package 2,000
Win Source Part Number 1325317-TK290P60Y,RQ
Ultra Librarian 3D Model Ultra Librarian TK290P60Y,RQ CAD Model

Description

The Toshiba Semiconductor and Storage TK290P60Y,RQ is an N-Channel MOSFET transistor with a drain to source voltage of 600 V and a continuous drain current of 11.5A (Tc).

  • Rds On (Max): 290mOhm @ 5.8A, 10V
  • Vgs(th) (Max): 4V @ 450µA
  • Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.6115 $60.0645
54+ $2.1437 $115.7598
84+ $2.0767 $174.4428
115+ $2.0097 $231.1155
149+ $1.9427 $289.4623
199+ $1.7417 $346.5983
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,944 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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