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Same model may have multiple batches, images only for reference.
TK30E06N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK30E06N1,S1X

Part No TK30E06N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 43A TO-220
Datasheet
TK30E06N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 43A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 1050pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 53W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212876-TK30E06N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK30E06N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-quality product designed for use in electronic devices.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 43A (Ta)
  • Maximum Rds On at Id,Vgs: 15 mOhm @ 15A, 10V
  • Case/Package: TO-220
  • Operating Temperature Range: up to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7782 $62.1166
30+ $3.9201 $117.6030
46+ $3.7976 $174.6896
63+ $3.6752 $231.5376
82+ $3.5528 $291.3296
109+ $3.1855 $347.2195
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Availability: 2,390 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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