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TK31E60W

Part No TK31E60W
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 30.8A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 1.5mA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 3000pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 88 mOhm @ 15.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212877-TK31E60W
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK31E60W CAD Model

Description

The Toshiba Semiconductor and Storage 212877-TK31E60W is an N-channel super junction MOSFET electronic component with a TO-220-3 case/package.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 30.8A at 25°C
  • Maximum Rds On: 88 mOhm at 15.4A and 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 3.7V at 1.5mA
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8575 $60.0075
50+ $2.3447 $117.2350
77+ $2.2719 $174.9363
106+ $2.1980 $232.9880
136+ $2.1252 $289.0272
182+ $1.9058 $346.8556
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,180 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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