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Same model may have multiple batches, images only for reference.
TK32E12N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK32E12N1,S1X

Part No TK32E12N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 60 V
Power Dissipation (Max) 98W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number TK32E12
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1315631-TK32E12N1,S1X
Ultra Librarian 3D Model Ultra Librarian TK32E12N1,S1X CAD Model

Description

The 1315631-TK32E12N1,S1X is a MOSFET (Metal Oxide) N-Channel FET manufactured by Toshiba Semiconductor and Storage.

  • Series: U-MOSVIII-H
  • Package: TO-220-3
  • Power Dissipation: 98W (Tc)
  • Drain to Source Voltage: 120V
  • Continuous Drain Current: 60A (Tc) @ 25°C
  • Rds On: 13.8mOhm @ 16A, 10V
  • Vgs(th) @ Id: 4V @ 500μA
  • Gate Charge (Qg) @ max Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) @ max Vds: 2000 pF @ 60 V
  • Operating Temperature: 150°C (TJ)
  • Fake Component Threat: 78%

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