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Same model may have multiple batches, images only for reference.
PSMN057-200P,127 NXP
Same model may have multiple batches, images only for reference.

PSMN057-200P,127

Part No PSMN057-200P,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 39A TO220AB
Datasheet
PSMN057-200P,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Series TrenchMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 57mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number PSMN057
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1020647-PSMN057-200P,127
Ultra Librarian 3D Model Ultra Librarian PSMN057-200P,127 CAD Model

Description

The PSMN057-200P,127 is an N-channel MOSFET with a maximum drain-source voltage of 200V.

  • Continuous Drain Current: 39A @ 25°C
  • Maximum On-Resistance: 57mΩ @ 17A and 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Power Dissipation: 250W
  • Mounting: Through-hole
  • Package: TO-220-3
  • Manufacturer: Nexperia USA Inc.

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