The Toshiba Semiconductor and Storage 1008962-TK3A65D(STA4,Q,M) is a discrete semiconductor product belonging to the Transistors - FETs, MOSFETs - Single category.

• Series: π-MOSVII
• Package: Tube
• Standard Package: 50
• FET Type: N-Channel
• FET Feature: None
• Vdss Drain to Source Voltage: 650 V
• Id Continuous Drain Current @ 25°C: 3A (Ta)
• Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Power Dissipation (Max): 35W (Tc)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220SIS
• Qg Gate Charge (Max) @ Vgs: 11 nC @ 10 V
• Ciss Input Capacitance (Max) @ Vds: 540 pF @ 25 V
• Vgs (Max): ±30V
• Operating Temperature: 150°C (TJ)
• MSL: Level 1 (Unlimited)
• HTSUS: 8541.29.0095