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Same model may have multiple batches, images only for reference.
TK3P50D,RQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK3P50D,RQ

Part No TK3P50D,RQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3A DPAK-3
Datasheet
TK3P50D,RQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212887-TK3P50D,RQ
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK3P50D,RQ CAD Model

Description

The TK3P50D,RQ is a MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Designed for: use in a variety of applications
  • Popularity Rating: medium
  • Maximum Power Dissipation: 60W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Supply and demand status: currently limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.0642 $64.5136
18+ $6.6170 $119.1060
28+ $6.4103 $179.4884
38+ $6.2035 $235.7330
49+ $5.9968 $293.8432
65+ $5.3765 $349.4725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,600 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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