The TK40A10N1,S4X is an N-channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

• Package Type: TO-220SIS
• Feature: Isolated Tab
• Power Dissipation: 35W (Tc)
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current @ 25°C: 40A (Tc)
• Gate-Source Threshold Voltage: 4V @ 500μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 8.2 mOhm @ 20A, 10V
• Maximum Gate Charge: 49nC @ 10V
• Maximum Input Capacitance: 3000pF @ 50V
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Temperature Range for Operating: 150°C (TJ)
• Category: Discrete Semiconductor Products
• Status: Active