The TK50P03M1 is a P-channel Power MOSFET from Toshiba Semiconductor and Storage, designed for switching applications. This MOSFET is characterized by its low on-state resistance, which contributes to reduced power loss and improved efficiency in power management systems.

Applications

• Power Management in Portable Devices
• DC-DC Converters
• Load Switching
• Power Supply Circuits
• Battery Management Systems

Features

• Low Drain-Source On-State Resistance (RDS(on)): Minimizes power dissipation.
• P-Channel MOSFET: Suitable for high-side switching applications.
• Low Gate Charge: Enables high-speed switching performance.
• Enhancement Mode: Simplifies gate drive requirements.
• RoHS Compliant: Environmentally friendly.

Benefits

• Increased Energy Efficiency: Low RDS(on) reduces power losses, improving overall system efficiency.
• Reduced Heat Dissipation: Lower power dissipation results in cooler operation, enhancing system reliability.
• Simplified Circuit Design: Enhancement mode operation simplifies the gate drive circuitry.
• High Switching Speed: Low gate charge enables fast switching speeds, suitable for high-frequency applications.
• Environmentally Compliant: RoHS compliance ensures adherence to environmental standards.

Technical Specifications

The TK50P03M1 has a drain-source voltage (VDS) rating of -30V, a continuous drain current (ID) rating of -50A, and a drain-source on-state resistance (RDS(on)) of typically 11.5 mΩ at VGS = -10V. The gate-source threshold voltage (VGS(th)) is typically -2.0V. It is available in a TO-252 package. Its low gate charge of 22 nC enables fast switching speeds.