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Same model may have multiple batches, images only for reference.
TK56A12N1,S4X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK56A12N1,S4X

Part No TK56A12N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 56A TO-220
Datasheet
TK56A12N1,S4X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 4200pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 28A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050546-TK56A12N1,S4X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK56A12N1,S4X CAD Model

Description

The TK56A12N1,S4X is a MOSFET N-channel transistor manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 45W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 120V
  • Continuous Drain Current @ 25°C: 56A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 69nC @ 10V
  • Maximum Input Capacitance: 4200pF @ 60V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 7.5 mOhm @ 28A, 10V

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