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SSM6L35FU(TE85L,F)

Part No SSM6L35FU(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 0.18A/0.1A US6
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate, 1.2V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 180mA, 100mA
Maximum Rds On at Id,Vgs 3 Ohm @ 50mA, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 9.5pF @ 3V
Maximum Power Dissipation 200mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1102323-SSM6L35FU(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6L35FU(TE85L,F) CAD Model

Description

The SSM6L35FU(TE85L,F) from Toshiba Semiconductor and Storage is a medium popularity electronic component that is widely used in the market.

  • Popularity: Medium
  • Category: Discrete Semiconductor Product
  • Applications: Power Management, Automotive, and Industrial
  • Gate Type: Logic Level Gate
  • Drive Voltage: 1.2V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation: 200mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 180mA and 100mA @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Input Capacitance: 9.5pF @ 3V
  • Maximum Rds On: 3 Ohm @ 50mA, 4V

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4590 $50.4900
270+ $0.3767 $101.7090
415+ $0.3649 $151.4335
570+ $0.3531 $201.2670
735+ $0.3414 $250.9290
985+ $0.3060 $301.4100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 220 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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