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TK5A50D5(STA4,Q)

Part No TK5A50D5(STA4,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 1099463-TK5A50D5(STA4,Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK5A50D5(STA4,Q) CAD Model

Description

The TK5A50D5(STA4,Q) is a 500V, 5A N-channel power MOSFET from Toshiba Semiconductor and Storage. This device is designed for high-voltage power applications, offering a balance of voltage handling capability and current capacity.

Applications:

  • Power Factor Correction (PFC): Used in PFC circuits to improve power quality.
  • Flyback Converters: Suitable for isolated power supplies in various applications.
  • High-Voltage Inverters: Applied in inverters for solar power and uninterruptible power supplies (UPS).
  • Lighting Ballasts: Used in electronic ballasts for fluorescent and LED lighting.
  • Auxiliary Power Supplies: Commonly found in standby power supplies for electronic devices.

Features:

  • 500V Drain-Source Voltage: Provides high-voltage handling capability.
  • Low On-Resistance: Minimizes power losses and enhances efficiency.
  • Fast Switching Speed: Enables high-frequency operation and reduced switching losses.
  • N-Channel: Offers high current flow.
  • High Avalanche Energy: Improves device ruggedness and reliability.

Benefits:

  • Increased Efficiency: Low on-resistance reduces power dissipation.
  • Enhanced Reliability: High avalanche energy rating ensures robust performance under stress.
  • Reduced Heat Generation: Lower on-resistance minimizes heat, improving thermal management.
  • Simplified Design: Easier integration into various power electronic circuits.
  • Compact Solution: Facilitates smaller and more efficient power supply designs.

Additional Details:

The TK5A50D5(STA4,Q) features a robust design to ensure reliability in demanding applications. It utilizes advanced process technology to achieve low on-resistance and fast switching speeds. The device is designed for automated assembly and is RoHS compliant. Its key electrical characteristics include a low gate threshold voltage for easy driving and a high gate charge for efficient switching. The MOSFET’s avalanche capability is optimized to withstand voltage transients.

This MOSFET is a versatile component for high-voltage power applications where efficiency and reliability are critical.

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