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Same model may have multiple batches, images only for reference.
TK5A53D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK5A53D(STA4,Q,M)

Part No TK5A53D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 525V 5A TO-220SIS
Datasheet
TK5A53D(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 540pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050549-TK5A53D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK5A53D(STA4,Q,M) CAD Model

Description

The TK5A53D(STA4,Q,M) MOSFET is a high-quality component designed for use in a range of electronic applications by Toshiba.

  • Mounting Type: Through-Hole
  • Channel Type: N-channel
  • Power Dissipation: 35W (Tc)
  • Category: Discrete Semiconductor Products
  • Component Status: Active
  • Maximum Rds On: 1.5 Ohm @ 2.5A, 10V
  • Gate-Source Threshold Voltage: 4.4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 11nC @ 10V
  • Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack
  • Drain-Source Breakdown Voltage: 525V
  • Continuous Drain Current (25°C): 5A (Ta)
  • Operating Temperature: Up to 150°C (TJ)

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