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Same model may have multiple batches, images only for reference.
TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK5A65D(STA4,Q,M)

Part No TK5A65D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5A TO-220SIS
Datasheet
TK5A65D(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.43 Ohm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1107448-TK5A65D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK5A65D(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance electronic component designed for use in various applications.

  • Power Dissipation: 40W (Tc)
  • Channel Type: N-Channel
  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 1.43 Ohm @ 2.5A and 10V
  • Package: TO-220SIS
  • Mounting Type: Through Hole
  • Supply and Demand: Balanced

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