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Same model may have multiple batches, images only for reference.
TK5Q60W,S1VQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK5Q60W,S1VQ

Part No TK5Q60W,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 5.4A IPAK / Trans MOSFET N-CH Si 600V 5.4A 3-Pin(3+Tab) IPAK Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.7V @ 270μA
Gate Charge (Qg) (Maximum) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 380pF @ 300V
Vgs (Maximum) ±30V
FET Feature Super Junction
Power Dissipation (Maximum) 60W (Tc)
Rds On (Maximum) @ Id, Vgs 900 mOhm @ 2.7A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Stub Leads, IPak
Win Source Part Number 796846-TK5Q60W,S1VQ
Popularity Medium
Supply and Demand Status Balance
Family Name TK5Q60W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK5Q60W,S1VQ CAD Model

Description

The Toshiba Semiconductor and Storage TK5Q60W MOSFET features super junction FET technology.

  • Drain source voltage: 600V
  • Current continuous drain: 5.4A @ 25°C
  • Family name: TK5Q60W
  • Drive voltage: 10V
  • Gate-source threshold voltage: 3.7V @ 270μA
  • Maximum power dissipation: 60W
  • Maximum Rds On: 900 mOhm @ 2.7A and 10V
  • Package: TO-251-3 stub leads, IPak
  • Alternative parts: MMIS60R900PTH, AOI4S60, STU7NM60N, and TSM6N60CH C5G
  • EOL date: 2030

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