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Same model may have multiple batches, images only for reference.
TK65A10N1,S4X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK65A10N1,S4X

Part No TK65A10N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 65A TO-220
Datasheet
TK65A10N1,S4X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 5400pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 32.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1107457-TK65A10N1,S4X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK65A10N1,S4X CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high power N-Channel device with a maximum power dissipation of 45W at Tc.

  • Maximum Power Dissipation: 45W @ Tc
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 65A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 81nC @ 10V
  • Maximum Input Capacitance: 5400pF @ 50V
  • Maximum Rds On: 4.8 mOhm @ 32.5A, 10V
  • Package: TO-220SIS
  • Isolated Tab: Yes
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 10V

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Quantity Unit Price Ext. Price
40+ $1.2943 $51.7720
95+ $1.0620 $100.8900
150+ $1.0288 $154.3200
205+ $0.9956 $204.0980
260+ $0.9624 $250.2240
350+ $0.8629 $302.0150
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