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Same model may have multiple batches, images only for reference.
TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK6A45DA(STA4,Q,M)

Part No TK6A45DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 5.5A TO-220SIS
Datasheet
TK6A45DA(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±30V
Maximum Rds On at Id,Vgs 1.35 Ohm @ 2.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1050553-TK6A45DA(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK6A45DA(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK6A45DA(STA4,Q,M) is an N-channel MOSFET with a drain-source breakdown voltage of 450V and a continuous drain current of 5.5A at 25°C.

  • Maximum Rds On: 1.35 Ohm @ 2.8A and 10V
  • Gate-Source Threshold Voltage: 4.4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 490pF @ 25V

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